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| STM32F103RBT6 Datasheet, PDF (55/105 Pages) STMicroelectronics – Medium-density performance line ARM-based 32-bit MCU | |||
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STM32F103x8, STM32F103xB
Electrical characteristics
Figure 25. Typical application with a 32.768 kHz crystal
5.3.7
Resonator with
integrated capacitors
CL1
32.768 kH z
resonator
CL2
OSC32_IN
RF
OSC32_OU T
Bias
controlled
gain
fLSE
STM32F103xx
ai14146
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
High-speed internal (HSI) RC oscillator
Table 24. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI
Frequency
DuCy(HSI) Duty cycle
-
8
- MHz
45
-
55
User-trimmed with the RCC_CR
register(2)
-
-
1(3)
ACCHSI
Accuracy of the HSI
oscillator
Factory-
calibrated
TA = â40 to 105 °C â2
TA = â10 to 85 °C â1.5
-
-
(4)(5)
TA = 0 to 70 °C
â1.3 -
TA = 25 °C
â1.1 -
tsu(HSI)(4)
HSI oscillator
startup time
1
-
2.5 %
2.2
2
1.8
2
µs
IDD(HSI)(4)
HSI oscillator power
consumption
-
80 100 µA
1. VDD = 3.3 V, TA = â40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 âSTM32F10xxx internal RC oscillator (HSI) calibrationâ available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified
range.
DocID13587 Rev 16
55/105
104
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