STM32L152CBT6 Datasheet, PDF (50/121 Pages) STMicroelectronics – Ultra-low-power 32-bit MCU ARM-based Cortex-M3

Electrical characteristics
STM32L151x6/8/B, STM32L152x6/8/B
Table 13. Thermal characteristics
Symbol
Ratings
T_STG
T_J
Storage temperature range
Maximum junction temperature
Value
Unit
–65 to +150
°C
150
°C
6.3
6.3.1
Operating conditions
General operating conditions
Table 14. General operating conditions
Symbol
Parameter
Conditions
Min Max Unit
f_HCLK
f_PCLK1
f_PCLK2
Internal AHB clock frequency
Internal APB1 clock frequency
Internal APB2 clock frequency
BOR detector disabled
0
32
0
32
0
32
1.65 3.6
MHz
V_DD
Standard operating voltage
BOR detector enabled,
at power on
1.8 3.6
V
BOR detector disabled,
after power on
1.65
3.6
V_DDA(1)
Analog operating voltage
(ADC and DAC not used)
Analog operating voltage
(ADC or DAC used)
1.65 3.6
Must be the same voltage
as V_DD(2)
1.8 3.6
V
P_D
Power dissipation at
T_A = 85 °C⁽³⁾
TA
Temperature range
BGA100 package
339 mW
Maximum power dissipation –40 85
Low power dissipation⁽⁴⁾
°C
–40 105
TJ
Junction temperature range -40 °C ≤ T_A ≤ 105 °C
–40 105
°C
1. When the ADC is used, refer to Table 54: ADC characteristics.
2. It is recommended to power V_DD and V_DDA from the same source. A maximum difference of 300 mV
between V_DD and V_DDA can be tolerated during power-up and operation.
3. If T_A is lower, higher P_D values are allowed as long as T_J does not exceed T_J max (see Table 68: Thermal
characteristics on page 114).
4. In low power dissipation state, T_A can be extended to this range as long as T_J does not exceed T_J max
(see Table 68: Thermal characteristics on page 114).
50/121
Doc ID 17659 Rev 8