M25P40_07 Datasheet, PDF (50/53 Pages) STMicroelectronics – 4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface

Revision history
13 Revision history
M25P40
Table 25. Document revision history
Date
Revision
Changes
12-Apr-2001 1.0 Document written.
25-May-2001 1.1 Serial Paged Flash Memory renamed as Serial Flash Memory.
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;
Protection modes; Release from Power-down and Read Electronic
Signature (RES); Power-up.
11-Sep-2001 1.2 ^{Repositioning of several tables and illustrations without changing their}
contents.
Power-up timing illustration; SO8W package removed.
Changes to tables: Abs Max Ratings/V_IO; DC Characteristics/V_IL.
16-Jan-2002
FAST_READ instruction added. Document revised with new timings, V_WI,
1.3
I_CC3 and clock slew rate. Descriptions of Polling, Hold Condition, Page
Programming, Release for Deep Power-down made more precise. Value
of t_W(max) modified.
Clarification of descriptions of entering Standby Power mode from Deep
Power-down mode, and of terminating an instruction sequence or data-
12-Sep-2002 1.4 out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary
Data.
Typical Page Program time improved. Deep Power-down current
changed. Write Protect setup and hold times specified, for applications
13-Dec-2002 1.5 that switch Write Protect to exit the Hardware Protection mode
immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
12-Jun-2003 1.6 Document promoted from Preliminary Data to full Datasheet.
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
24-Nov-2003 2.0 _{40 MHz AC Characteristics table included as well as 25 MHz. ICC3(max),}
t_SE(typ) and t_BE(typ) values improved. Change of naming for VDFPN8
package.
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for
RoHS compliant devices.
05-Aug-2004
4.0
Device grade information clarified. Data-retention measurement
temperature corrected. Details of how to find the date of marking added.
03-Jan-2005
Small text changes. Notes 2 and 3 removed from Table 24: Ordering
5.0 information scheme.
End timing line of t_SHQZ modified in Figure 25: Output timing.
Updated Page Program (PP) instructions in Page Programming, Page
01-Aug-2005 6.0 Program (PP), Instruction times (device grade 6) and Instruction times
(device grade 3).
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