TL071_08 Datasheet, PDF (5/15 Pages) STMicroelectronics – Low noise JFET single operational amplifier

TL071
Electrical characteristics
Table 3.
Symbol
V_CC = ±15V, T_amb = +25°C (unless otherwise specified) (continued)
Parameter
TL071I,M,AC,AI,AM,
BC,BI,BM
TL071C
Unit
Min. Typ. Max. Min. Typ. Max.
t_r
K_ov
GBP
R_i
THD
e_n
∅m
Rise time
V_in = 20mV, R_L = 2kΩ, C_L = 100pF, unity gain
Overshoot
V_in = 20mV, R_L = 2kΩ, C_L = 100pF, unity gain
Gain bandwidth product
V_in = 10mV, R_L = 2kΩ, C_L = 100pF, f= 100kHz
Input resistance
Total harmonic distortion,
f= 1kHz, R_L= 2kΩ,C_L = 100pF, A_v = 20dB,
V_o = 2V_pp)
Equivalent input noise voltage
R_S = 100Ω, f = 1KHz
Phase margin
0.1
10
2.5 4
10¹²
0.01
15
45
0.1
10
2.5 4
10¹²
0.01
15
45
μs
%
MHz
W
%
---n---V-----
Hz
degrees
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
temperature.
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