T1625T-8I Datasheet, PDF (5/10 Pages) STMicroelectronics – Standard 16 A Triac

T1625T-8I
Characteristics
Figure 7.
Non repetitive surge peak on-state Figure 8.
current and corresponding values
of I²t
Relative variation of gate trigger
current versus junction
temperature
10000 ^{ITSM (A), I²t (A²s)}
T_j initial = 25 °C
1000
I_TSM
dl /dt limitation: 100 A / µs
100
I²t
4.0 ^{IGT[Tj]/IGT[Tj = 25 °C]}
3.5
I_GT Q4
3.0
I_GT Q3
2.5
I_GT Q1-Q2
2.0
1.5
1.0
typical values
sinusoidal pulse with width t_p<10 ms
10
0.01
0.10
1.00
t_p(ms)
10.00
0.5
0.0
T_j(°C)
-50 -30 -10 10 30 50 70 90 110 130 150
Figure 9.
Relative variation of gate trigger
voltage versus junction
temperature
1.5 ^{VGT[Tj] / VGT[Tj = 25 °C]}
typical values
1.0
V_GT Q1 Q2 Q3 Q4
0.5
Figure 10. Relative variation of holding
current and latching current versus
junction temperature
2.0 ^{IH, IL[Tj] / IH, IL[Tj = 25 °C]}
typical values
1.5
1.0
I_L
0.5
I_H
T_j(°C)
0.0
-50 -30 -10 10 30 50 70 90 110 130 150
0.0
T_j(°C)
-50 -30 -10 10 30 50 70 90 110 130 150
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c
versus reapplied (dV/dt)c
(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c
4
typical values
3
2
1
(dV/dt)c (V/µs)
0
0.1
1.0
10.0
100.0
Figure 12. Relative variation of critical rate of
decrease of main current (di/dt)c
versus junction temperature
10 ^{(dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C]}
9
8
typical values
7
6
5
4
3
2
1
T_j(°C)
0
25
50
75
100
125
150
Doc ID 022069 Rev 2
5/10