T1610T-8I Datasheet, PDF (5/10 Pages) STMicroelectronics – Logic level 16 A Triac

T1610T-8I
Characteristics
Figure 7.
Non repetitive surge peak on-state Figure 8.
current and corresponding values
of I²t
Relative variation of gate trigger
current versus junction
temperature (typical values)
10000 ^{ITSM (A), I²t (A²s)}
T_j initial = 25 °C
2.0 ^{IGT[Tj]/IGT[Tj = 25 °C]}
I_GT Q3
typical values
1000
dl /dt limitation: 100 A / µs
100
I_TSM
I²t
1.5
I_GT Q1-Q2
1.0
0.5
Sinusoidal pulse width t_p<10 ms
10
0.01
0.10
1.00
t_p(ms)
10.00
0.0
T_j(°C)
-50 -30 -10 10 30 50 70 90 110 130 150
Figure 9.
Relative variation of gate trigger
voltage versus junction
temperature (typical values)
2.0 ^{VGT[Tj] / VGT[Tj = 25 °C]}
Figure 10. Relative variation of holding
current and latching current versus
junction temperature
2.0 ^{IH, IL[Tj] / IH, IL[Tj = 25 °C]}
typical values
1.5
1.5
1.0
V_GT
0.5
1.0
I_L
0.5
I_H
0.0
T_j(°C)
-50 -30 -10 10 30 50 70 90 110 130 150
0.0
T_j(°C)
-50 -30 -10 10 30 50 70 90 110 130 150
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of critical rate of
decrease of current (dI/dt)c versus
decrease of current (dI/dt)c versus
reapplied (dV/dt)c
junction temperature
4 ^{(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c[(dV/dt)c 10 V/µs]}
logic level
typical values
10 ^{(dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C]}
typical values
9
8
3
7
6
2
5
4
3
1
2
(dV/dt)c (V/µs)
0
0.1
1.0
10.0
100.0
1
0
T_j(°C)
25
50
75
100
125
150
Doc ID 018766 Rev 3
5/10