STW18NK80Z_06 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH™ Power MOSFET

STW18NK80Z
2
Electrical characteristics
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
I_D = 1mA, V_GS =0
800
V_DS = max rating
V_DS = max rating,
T_C = 125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 150µA
3
V_GS = 10V, I_D = 10A
Typ. Max. Unit
V
1
µA
50
µA
±10 µA
3.75 4.5
V
0.34 0.38
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V_, I_D = 10A
19
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
6100
pF
500
pF
100
pF
C_oss
(2)
eq
Equivalent output
capacitance
V_GS = 0V, V_DS = 0V
to 640V
240
pF
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V_DD = 400V, I_D = 9A
R_G = 4.7Ω V_GS = 10V
(see Figure 13)
V_DD = 640V, I_D = 18A,
V_GS = 10V
(see Figure 14)
46
ns
32
ns
140
ns
32
ns
192 250 nC
34
nC
102
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS.
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