STTH30R02DJF Datasheet, PDF (5/9 Pages) STMicroelectronics – Ultrafast recovery diode high efficiency

STTH30R02DJF
Characteristics
Figure 9. Transient peak forward voltage
versus dI_F/dt (typical values)
5 ^VFP(V)
IF=IF(AV)
Tj=125 °C
4
3
2
1
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 10. Forward recovery time versus dI_F/dt
(typical values)
t_FR(ns)
240
220
200
IF=IF(AV)
VFR=1.3V
Tj=125 °C
180
160
140
120
100
80
60
40
20
dIF/dt(A/µs)
0
100
150
200
250
300
350
400
450
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
250
PowerFLAT 5x6
200
150
100
100
10
1
50
VR(V)
Scu(cm2)
0
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
Doc ID 022761 Rev 1
5/9