STTH20LCD06C Datasheet, PDF (5/10 Pages) STMicroelectronics – low reverse current

STTH20LCD06C
Characteristics
Figure 11. Forward recovery time versus dI_F/dt Figure 12. Junction capacitance versus
(typical values, per diode)
reverse voltage applied
(typical values, per diode)
200 ^{tFR (ns)}
100 ^{C (pF)}
180
IF = IF(AV)
160
VR = 1.1 x VFmax.
Tj = 125 °C
140
120
100
10
80
60
40
20
dIF/dt (A/µs)
0
1
0 50 100 150 200 250 300 350 400 450 500
1
10
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
VR (V)
100
1000
Figure 13. Thermal resistance junction to ambient versus copper surface under tab
Rth(j-a)(°C/W)
80
Epoxy printed board Fr4, copper thickness: 35 µm
70
D2PAK
60
50
40
30
20
10
Scu(cm²)
0
0
5
10
15
20
25
30
35
40
Doc ID 15898 Rev 2
5/10