STS2DNF30L_07 Datasheet, PDF (5/12 Pages) STMicroelectronics – Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET

STS2DNF30L
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2A, V_GS = 0
I_SD = 2A, V_DD = 30V
di/dt = 100A/µs,
T_j = 150°C
(see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
3
A
12 A
1.3 V
19
ns
8.1
nC
0.85
A
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