STP12NK60Z_09 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET

STP12NK60Z, STF12NK60Z, STW12NK60Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 10 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 10 A, di/dt = 100 A/µs
V_DD = 50 V
(see Figure 24)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 10 A, di/dt = 100 A/µs
V_DD = 50 V, T_j = 150 °C
(see Figure 24)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
10 A
-
40 A
-
1.6 V
358
ns
-
3
µC
17
A
460
ns
- 4.2
µC
18.2
A
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
BV_GSO ⁽¹⁾
Gate-Source breakdown
voltage
Igs=± 1 mA (open drain)
30 -
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Doc ID 11324 Rev 7
5/15