STL80N75F6 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 75 V, 4.5 m typ., 18 A STripFET DeepGATE VI Power MOSFET in PowerFLAT 5x6 package

STL80N75F6
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I_SD Source-drain current
-
(1)
I_SDM Source-drain current (pulsed)
-
(2)
V_SD Forward on voltage
I_SD = 18 A, V_GS = 0
-
t_rr Reverse recovery time
I_SD = 18 A,
-
di/dt = 100 A/μs,
Q_rr Reverse recovery charge
-
V_DD= 60 V, T_J = 150 °C
I_RRM Reverse recovery current
(see Figure 15)
-
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 μs, duty cycle 1.5%
18 A
72 A
1.5 V
48
ns
96
nC
4
A
DocID018785 Rev 3
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