STGW60H65F Datasheet, PDF (5/12 Pages) STMicroelectronics – 60 A, 650 V field stop trench gate IGBT

STGW60H65F
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
IC (A)
220
200
180
160
140
120
100
80
60
40
20
0
0
Output characteristics (T_J = -40 °C) Figure 3.
V_GE = 15V
V_GE = 20V
AM11847v1
13V
IC (A)
220
200
180
11V
160
140
120
100
80
60
40
9V
20
0
1
2
3
4
VCE (V)
0
Output characteristics (T_J = 25 °C)
AM11848v1
V_GE = 15V
13V
V_GE = 20V
11V
9V
1
2
3
4
VCE (V)
Figure 4.
IC (A)
220
200
180
160
140
120
100
80
60
40
20
0
0
Output characteristics (T_J = 150 °C) Figure 5.
V_GE = 15V
AM11849v1
IC (A)
220
V_GE = 20V
13V
200
180
160
11V
140
120
100
80
60
9V
40
20
0
1
2
3
4
VCE (V)
6
Transfer characteristics
AM11850v1
V_CE = 10V
T_J = 150°C
T_J = 25°C
7
8
T_J = -40°C
9
10
11
12 VGE (V)
Figure 6.
VCE (V)
2.8
V_CE(SAT) vs. junction temperature
AM11851v1
2.6
I_C = 120A
2.4
2.2
2.0
I_C = 60A
1.8
1.6
I_C = 30A
1.4
1.2
-50 -25
0
25
50
75 100 125 TJ (ºC)
Figure 7.
VCE (V)
2.8
2.6
2.4
V_CE(SAT) vs. collector current
AM11852v1
V_GE = 15V
T_J = 150°C
T_J = 25°C
2.2
2.0
T_J = -40°C
1.8
1.6
1.4
1.2
30 40 50 60 70 80 90 100 110 IC (A)
Doc ID 019012 Rev 4
5/12