STGIPS10K60T-H Datasheet, PDF (5/19 Pages) STMicroelectronics – Short-circuit rugged IGBTs

STGIPS10K60T-H
2
Electrical ratings
Electrical ratings
2.1
Absolute maximum ratings
Symbol
Table 3. Inverter part
Parameter
V_PN Supply voltage applied between P - N_U, N_V, N_W
V_PN(surge)
V_CES
Supply voltage (surge) applied between P - N_U,
N_V, N_W
Each IGBT collector emitter voltage (V_IN(1) = 0)
± I_C(2)
± I_CP ⁽³⁾
Each IGBT continuous collector current at
T_C = 25°C
Each IGBT pulsed collector current
P_TOT Each IGBT total dissipation at T_C = 25°C
t_scw
Short-circuit withstand time, V_CE = 0.5 V_(BR)CES
T_j = 125 °C, V_CC = V_boot= 15 V, V_{IN (1)}= 5 V
1. Applied between HIN_i, LIN_{i and} G_ND for i = U, V, W.
2. Calculated according to the iterative formula:
Value
450
500
600
10
20
33
5
I_C(T_C) = _R-----_t--_h---_j--_–---_c----_×-----_V----_C----_E----₍-^T-_s--_aj--⁽-_t-^m-₎--₍-^am---^x--_a-⁾--_x-–-₎--₍-^T--_T--^C--_j-₍--_m----_a---_x---₎-_,---_I--_C----₍--_T----_C----₎---₎
3. Pulse width limited by max junction temperature.
Unit
V
V
V
A
A
W
µs
Table 4. Control part
Symbol
Parameter
Min.
V_OUT
V_CC
V_boot
V_IN
Output voltage applied between OUT_U, OUT_V,
OUT_W - GND
Low voltage power supply
Bootstrap voltage
Logic input voltage applied between HIN, LIN and
GND
V_SD Open drain voltage
dV_OUT/dt Allowed output slew rate
V_boot - 21
- 0.3
- 0.3
- 0.3
- 0.3
Max.
Unit
V_boot + 0.3
V
21
V
620
V
15
V
15
V
50
V/ns
Symbol
V_ISO
T_C
T_J
Table 5. Total system
Parameter
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
Module case operation temperature
Power chips operating junction temperature
Value
Unit
2500
V
-40 to 125
°C
-40 to 150
°C
DocID024167 Rev 5
5/19
19