STFILED625 Datasheet, PDF (5/15 Pages) STMicroelectronics – Very low intrinsic capacitance

STFILED625, STPLED625
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 4.2 A, V_GS = 0
4.2 A
-
16.8 A
-
1.5 V
t_rr
Reverse recovery time
I_SD = 4.2 A, di/dt = 100 A/µs
290
ns
Q_rr Reverse recovery charge
V_DD= 60 V
- 1900
nC
I_RRM Reverse recovery current
(see Figure 19)
13
A
t_rr
Reverse recovery time
I_SD = 4.2 A, di/dt = 100 A/µs
320
ns
Q_rr Reverse recovery charge
V_DD= 60 V T_J = 150 °C
- 2200
nC
) _{IRRM Reverse recovery current}
(see Figure 19)
14
A
t(s 1. Pulse width limited by safe operating area
c _{2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Produ _{Table 8. Gate-source Zener diode}
te Symbol
Parameter
Test conditions
sole ^V(BR)GSO
Gate-source breakdown
voltage
I_GS= ± 1 mA, I_D=0
Min. Typ. Max. Unit
30 -
-V
- ^{Ob The built-in back-to-back Zener diodes have been specifically designed to enhance not only}
) the device’s ESD capability, but also to make them capable of safely absorbing any voltage
t(s ^{transients that may occasionally be applied from gate to source. In this respect, the Zener}
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
Obsolete ^{Produc The integrated Zener diodes thus eliminate the need for external components.}
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