STF5NK52ZD Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET

STB5NK52ZD-1, STD/F/P5NK52ZD
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 260 V, I_D = 2.2 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
Min. Typ. Max Unit
11.4
ns
13.6
ns
23.1
ns
15
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 4.4 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 4.4 A, di/dt = 100 A/µs
V_DD = 60 V
(see Figure 23)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 4.4 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
4.4 A
17.6 A
1.6 V
97.7
ns
300
nC
5.9
A
139
ns
500
nC
7.2
A
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
BV_GSO(1)
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
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