STF18NM80 Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 400 V, I_D = 8.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 16 and
Figure 21)
Min.
-
Typ.
18
28
96
50
Max. Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD(2)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 17 A, V_GS = 0
I_SD = 17 A, di/dt = 100
A/µs, V_DD = 100 V,
(see Figure 18)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 17 A,
di/dt = 100 A/µs,
V_DD = 100 V, Tj=150°C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
Typ.
618
9.6
31.2
Max. Unit
17 A
68 A
1.6 V
ns
µC
A
822
ns
-
13
µC
31.8
A
Doc ID 15421 Rev 5
5/21