STDLED524 Datasheet, PDF (5/22 Pages) STMicroelectronics – Very low intrinsic capacitance

STDLED524,STFILED524,STPLED524,STULED524
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 2.5 A, V_GS = 0
2.5 A
-
10 A
-
1.6 V
t_rr
Reverse recovery time
I_SD = 2.5 A, di/dt = 100 A/µs
173
ns
Q_rr Reverse recovery charge
V_DD= 60 V
- 778
µC
I_RRM Reverse recovery current
(see Figure 20)
9
A
t_rr
Reverse recovery time
I_SD = 2.5 A, di/dt = 100 A/µs
196
ns
Q_rr Reverse recovery charge
V_DD= 60 V T_J = 150 °C
- 941
µC
) I_RRM Reverse recovery current
(see Figure 20)
10
A
t(s ^{1. Pulse width limited by safe operating area.}
c _{2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.}
Produ Table 8. Gate-source Zener diode
te ^Symbol
Parameter
Test conditions
ole ^BV_GSO
Gate-source breakdown
voltage
I_GS= ± 1 mA, I_D = 0
Min. Typ. Max. Unit
30 -
-V
Obs _{The built-in back-to-back Zener diodes have been specifically designed to enhance not only}
) ^{- the device’s ESD capability, but also to make them capable of safely absorbing any voltage}
t(s ^{transients that may occasionally be applied from gate to source. In this respect, the Zener}
voltage is appropriate to achieve efficient and cost-effective protection of the device’s
Obsolete ^{Produc integrity. The integrated Zener diodes thus eliminate the need for external components.}
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5/22