STD95NH02L-1 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET

STD95NH02L - STD95NH02L-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 40A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 80A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 20V, T_j = 150°C
Reverse recovery current (see Figure 16)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Typ.
42
50.4
2.4
Max. Unit
80
A
320 A
1.3 V
ns
nC
A
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