STD95N4LF3 Datasheet, PDF (5/15 Pages) STMicroelectronics – Switching application

STD95N4LF3
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 80 A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A, di/dt = 100 A/µs,
V_DD = 20 V, T_j = 150 °C
(see Figure 15 and
Figure 19)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
Typ.
40
55
3
Max. Unit
80 A
320 A
1.5 V
ns
nC
A
Doc ID 15372 Rev 3
5/15