STD70NH02L Datasheet, PDF (5/16 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0062 Ohm - 60A IPAK/DPAK STripFET II Power MOSFET

STD70NH02L - STD70NH02L-1
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 30A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 60A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 15V, T_j = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
36
35
3.6
Max. Unit
60
A
240 A
1.3 V
ns
µC
A
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