STD20NF20_09 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET™ Power MOSFET

STD20NF20, STF20NF20, STP20NF20
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
-
V_SD(2) Forward on voltage
I_SD = 20 A, V_GS = 0
-
t_rr
Reverse recovery time I_SD = 20 A, di/dt = 100A/µs
Q_rr
Reverse recovery charge V_DD = 50 V
-
I_RRM Reverse recovery current (see Figure 20)
t_rr
Reverse recovery time I_SD = 20 A, di/dt = 100 A/µs
Q_rr
Reverse recovery charge V_DD = 50 V, T_j = 150 °C
-
I_RRM Reverse recovery current (see Figure 20)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
18
A
72
A
1.6 V
155
ns
775
nC
10
A
183
ns
1061
nC
11.6
A
Doc ID 13154 Rev 4
5/15