STD18N65M5 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages

STB18N65M5, STD18N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_{d (V)}
t_{r (V)}
t_f(i)
t_c(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
V_DD = 400 V, I_D = 9.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19 and
Figure 22)
Min.
-
Typ.
36
7
9
11
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 15 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 15 A, di/dt = 100 A/µs
-
V_DD = 100 V (see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 15 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
-
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
15 A
60 A
1.5 V
290
ns
3.4
µC
23.5
A
352
ns
4
µC
24
A
Doc ID 023446 Rev 1
5/18