STD18N55M5 Datasheet, PDF (5/22 Pages) STMicroelectronics – N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(off)
t_r
t_c
t_f
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
V_DD = 400 V, I_D = 9 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18, Figure 23)
Min. Typ. Max Unit
29
ns
9.5
ns
-
-
23
ns
13
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 13 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 13 A, di/dt = 100 A/µs
-
V_DD = 100 V (see Figure 20)
t_rr
Reverse recovery time
I_SD = 13 A, di/dt = 100 A/µs
Q_rr Reverse recovery charge
V_DD = 100 V, T_j = 150 °C
-
I_RRM Reverse recovery current
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
13 A
52 A
1.5 V
238
ns
2.8
µC
23.5
A
278
ns
3.3
µC
24
A
Doc ID 17078 Rev 2
5/22