STD17NF03L-1 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET

STD17NF03L - STD17NF03L-1
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 17A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 17A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 15V, T_j = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
28
18
1.3
Max. Unit
22
A
88
A
1.5 V
ns
nC
A
5/14