STD11N65M5 Datasheet, PDF (5/25 Pages) STMicroelectronics – N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(v)
t_r(v)
t_f(i)
t_c(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
V_DD = 400 V, I_D = 7.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 21 and
Figure 24)
Min. Typ. Max. Unit
23
ns
10
ns
-
-
13.5
ns
13
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 9 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 9 A, di/dt = 100 A/µs
-
V_DD = 100 V (see Figure 21)
t_rr
Reverse recovery time
I_SD = 9 A, di/dt = 100 A/µs
Q_rr Reverse recovery charge
V_DD = 100 V, T_j = 150 °C
-
I_RRM Reverse recovery current
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
9A
36 A
1.5 V
232
ns
2
µC
17.5
A
328
ns
2.8
µC
17
A
Doc ID 022864 Rev 2
5/25