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STC5NF20V_0710 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 20V - 0.030Ω - 5A - TSSOP8 2.7V-drive STripFET™ II Power MOSFET
STC5NF20V
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5A, VGS = 0
ISD = 5A,
di/dt = 100A/µs,
VDD = 10V, TJ = 150°C
Figure 16 on page 8
5
A
20 A
1.2 V
26
ns
13
µC
1
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
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