STC5DNF30V Datasheet, PDF (5/12 Pages) STMicroelectronics – Dual N-channel 30V - 0.032Ω - 4.5A - TSSOP8 2.7V-Driver STripFET™ Power MOSFET

STC5DNF30V
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 4.5A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 4.5A, di/dt =100A/µs,
Reverse recovery charge V_DD = 10V, T_j = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Typ.
26
13
1
Max. Unit
4.5
A
18
A
1.2
V
ns
nC
A
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