STB95N4F3 Datasheet, PDF (5/20 Pages) STMicroelectronics – N-channel 40 V, 5.0, 80 A STripFET III

STB95N4F3, STD95N4F3, STP95N4F3
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=20 V, I_D= 40 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 16)
V_DD=20 V, I_D= 40 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 16)
Min. Typ. Max. Unit
15
-
50
ns
-
ns
40
-
15
ns
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=80 A, V_GS=0
I_SD=80 A,
di/dt = 100 A/µs,
V_DD= 30 V, Tj=150 °C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.5 V
45
ns
-
60
nC
2.8
A
Doc ID 13288 Rev 4
5/20