STB60NF06_06 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET™ II Power MOSFET

STB60NF06 - STB60NF06-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 60A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 60A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 25V, T_j = 150°C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
73
182
5
Max. Unit
60
A
240 A
1.3 V
ns
nC
A
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