STB60NF06LT4 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET™ II Power MOSFET

STB60NF06L - STP60NF06L - STP60NF06LFP
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 60A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 60A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 30V, T_j = 150°C
Reverse recovery current (see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
110
250
4.5
Max. Unit
60
A
240 A
1.3 V
ns
nC
A
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