STB4NK60Z_08 Datasheet, PDF (5/20 Pages) STMicroelectronics – N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_{SD Source-drain current}
I_SDM(1) ^{Source-drain current (pulsed)}
V_SD(2) Forward on voltage
I_SD = 4 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 4 A, di/dt = 100 A/µs
V_DD = 24 V, Tj = 150 °C
(see Figure 19)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
4
A
16 A
1.6 V
400
ns
1700
nC
8.5
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BV_GSO ⁽¹⁾ Gate-source breakdown voltage Igs=± 1 mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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