STB45N40DM2AG Datasheet, PDF (5/15 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STB45N40DM2AG
Symbol
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
-
38 A
Source-drain current
(pulsed)
-
152 A
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 38 A
ISD = 38 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
1.6 V
- 95
ns
- 0.4
µC
- 8.5
A
Reverse recovery time
ISD = 38 A, di/dt = 100 A/µs,
- 185
ns
Reverse recovery charge ^{VDD = 60 V, Tj = 150 °C (see}
- 1.62
µC
Figure 16: "Test circuit for
Reverse recovery current ^{inductive load switching and}
- 17.5
A
diode recovery times")
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
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