STB43N60DM2 Datasheet, PDF (5/15 Pages) STMicroelectronics – Fast-recovery body diode

STB43N60DM2
Symbol Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
Source-drain
current
(pulsed)
VSD⁽²⁾
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
-
34 A
-
136 A
VGS = 0 V, ISD = 34 A
ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
-
1.6 V
- 120
ns
- 0.6
µC
- 10.4
A
- 240
ns
ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for - 2.4
µC
inductive load switching and diode
recovery times")
- 20.5
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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