STB30NF10_06 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STB30NF10 - STP30NF10 - STP30NF10FP
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 30A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 30A,
di/dt = 100A/µs,
V_DD = 55V, T_j = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
35
A
140 A
1.3 V
110
ns
390
nC
7.5
A
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