STB300NH02L_0709 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 24V - 120A - TO-220 / D2PAK STripFET™ Power MOSFET

STB300NH02L - STP300NH02L
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD = 10V, I_D = 60A
R_G= 4.7Ω, V_GS= 10V,
(see Figure 13)
V_DD = 10V, I_D = 60A
R_G= 4.7Ω, V_GS= 10V,
(see Figure 13)
Min. Typ. Max. Unit
18
ns
275
ns
138
ns
94.4
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_{SD Source-drain current}
I_SD Source-drain current (pulsed)
V_SD ⁽¹⁾ Forward on voltage
I_SD = 120 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 120A, V_DD = 20V,
di/dt = 100A/µs
T_j = 25°C (see Figure 18)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =120A, V_DD = 20V
di/dt = 100A/µs
T_j = 150°C (see Figure 18)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
120 A
640 A
1.3 V
63
ns
85
nC
2.7
A
63.2
ns
88
nC
2.8
A
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