STB20N90K5 Datasheet, PDF (5/15 Pages) STMicroelectronics – Zener-protected

STB20N90K5
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD= 450 V, ID = 10 A, RG = 4.7 Ω
- 20.2 -
ns
VGS = 10 V
- 13.5 -
ns
(see Figure 13: "Test circuit for
resistive load switching times" and ^{- 64.7 -}
ns
Figure 18: "Switching time
waveform")
-
16
-
ns
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
ISD
Source-drain current
ISDM⁽¹⁾
Source-drain current
(pulsed)
VSD⁽²⁾
Forward on voltage
ISD = 20 A, VGS = 0 V
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
Qrr
Reverse recovery
charge
VDD = 60 V
(see Figure 15: "Test circuit for
IRRM
Reverse recovery
current
inductive load switching and diode
recovery times")
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
Qrr
Reverse recovery
charge
VDD = 60 V, Tj = 150 °C
(see Figure 15: "Test circuit for
IRRM
Reverse recovery
current
inductive load switching and diode
recovery times")
Min. Typ. Max. Unit
-
20 A
-
80 A
-
1.5 V
- 517
ns
- 11.4
µC
- 44
A
- 674
ns
- 14
µC
- 41.6
A
Notes:
(1)_{Pulse width limited by safe operating area}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source
breakdown voltage
IGS= ±1 mA, ID= 0 A
Min. Typ. Max. Unit
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID029147 Rev 3
5/15