STB185N55F3 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET

STB185N55F3 - STP185N55F3
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD=120A, V_GS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=120A,
di/dt = 100A/µs,
V_DD=35V, Tj=150°C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
120 A
480 A
1.5
V
60
ns
0.11
µC
3.5
A
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