STB16NF06LT4 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 60V - 0.07Ω - 16A - D2PAK STripFET™ Power MOSFET

STB16NF06L
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 16A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 16A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 16V, T_j = 150°C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
50
67.5
2.7
Max. Unit
16
A
64
A
1.3 V
ns
nC
A
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