STB150NF55_06 Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 55V - 0.005Ω - 120A - D2PAK/TO-220/TO-247 STripFET™ II Power MOSFET

STB150NF55 - STP150NF55 - STW150NF55
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 120A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 120A,
di/dt = 100A/µs,
V_DD = 25V, T_j = 150°C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
120 A
480 A
1.5 V
130
ns
350
nC
7.5
A
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