STB14NM50N Datasheet, PDF (5/26 Pages) STMicroelectronics – N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages

STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 12 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 12 A, di/dt = 100 V/ns,
V_DD = 400 V
-
(see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 12 A, di/dt = 100 V/ns,
V_DD = 400 V, T_J = 150 °C
-
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
12 A
48 A
1.6 V
252
ns
2.8
µC
22
A
300
ns
3.3
µC
22.2
A
Doc ID 16832 Rev 6
5/26