M68AF511A Datasheet, PDF (5/18 Pages) STMicroelectronics – 4 Mbit (512K x8), 5V Asynchronous SRAM

Figure 4. Block Diagram
A18
A8
DQ7
DQ0
M68AF511A
ROW
DECODER
MEMORY
ARRAY
VCC
VSS
I/O CIRCUITS
COLUMN
DECODER
A0
A7
E
W
G
AI05916
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
Table 2. Absolute Maximum Ratings
Symbol
Parameter
I_O ⁽¹⁾
Output Current
T_A
Ambient Operating Temperature
T_STG
Storage Temperature
V_CC
Supply Voltage
V_IO ⁽²⁾
Input or Output Voltage
P_D
Power Dissipation
Note: 1. One output at a time, not to exceed 1 second duration.
2. Up to a maximum operating V_CC of 6.0V only.
plied. Exposure to Absolute Maximum Rating con-
ditions for periods greater than 1 sec may affect
device reliability. Refer also to the STMicroelec-
tronics SURE Program and other relevant quality
documents.
Value
20
–55 to 125
–65 to 150
–0.5 to 6.5
–0.5 to V_CC +0.5
1
Unit
mA
°C
°C
V
V
W
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