M29W017D Datasheet, PDF (5/36 Pages) STMicroelectronics – 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory

M29W017D
SUMMARY DESCRIPTION
The M29W017D is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage (2.7 to 3.6V) supply. On
power-up the memory defaults to its Read mode
where it can be read in the same way as a ROM or
EPROM.
The memory is divided into 32 blocks of 64KBytes
(see Table 16, Block Addresses) that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and
TFBGA48 (0.8mm pitch) packages. The memory is
supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
VCC
21
A0-A20
8
DQ0-DQ7
W
E
M29W017D
G
RB
RP
VSS
AI04186
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ7 Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
V_CC
Supply Voltage
V_SS
Ground
NC
Not Connected Internally
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