IRF-634 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET

IRF634 - IRF634FP
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain Current
(pulsed
V_SD ⁽²⁾ Forward on voltage
I_SD = 8 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 8A, di/dt = 100A/µs
V_DD = 30V, T_j = 150°C
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
8
A
32
A
1.7
V
198
ns
1.1
nC
11.3
A
Obsolete ^{Product(s) - Obsolete Product(s)}
5/14