BTB08 Datasheet, PDF (5/11 Pages) STMicroelectronics – 8A TRIACS

BTA08, BTB08 and T8 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t_p < 10 ms
and corresponding value of I²t
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
ITSM(A), I²t (A²s)
1000
Tj initial=25°C
100
dI/dt limitation:
50A/µs
10
0.01
tp(ms)
0.10
1.00
ITSM
I²t
10.00
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20
0
20 40 60 80 100 120 140
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & Logic level
types)
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.2
2.0
TW
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
T835/CW/BW
T810/SW
100.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
C
1.4
1.2
B
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0
10.0
100.0
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: DPAK and D²PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35 µm)
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
Rth(j-a)(°C/W)
100
90
5
80
4
70
60
3
50
DPAK
40
2
30
D²PAK
1
20
Tj(°C)
10
S(cm²)
0
0
0
25
50
75
100
125
0 4 8 12 16 20 24 28 32 36 40
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