7782 Datasheet, PDF (49/63 Pages) STMicroelectronics – 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

M58CR032C, M58CR032D
Table 31. CFI Query System Interface Information
Offset
Data
Description
V_DD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0017h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
V_DD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0020h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
V_PP [Programming] Supply Minimum Program/Erase voltage
1Dh
0017h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
V_PP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C0h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1Fh
0004h _{Typical time-out per single Byte/Word program = 2}ⁿ _µs
20h
0003h _{Typical time-out for Quadruple Word Program = 2}ⁿ _µs
21h
000Ah _{Typical time-out per individual Block Erase = 2}ⁿ _ms
22h
0000h _{Typical time-out for full Chip Erase = 2}ⁿ _ms
23h
0003h _{Maximum time-out for Word Program = 2}ⁿ _{times typical}
24h
0004h _{Maximum time-out for Quadruple Word = 2}ⁿ _{times typical}
25h
0002h _{Maximum time-out per individual Block Erase = 2}ⁿ _{times typical}
26h
0000h _{Maximum time-out for Chip Erase = 2}ⁿ _{times typical}
Value
1.7V
2V
1.7V
12V
16µs
8µs
1s
NA
128µs
128µs
4s
NA
Table 32. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h _{Device Size = 2}ⁿ _{in number of Bytes}
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0003h
0000h
Maximum number of Bytes in multi-Byte program or page = 2ⁿ
2Ch
0002h Number of Erase Block Regions within the device
bit 7 to 0 = x = number of Erase Block Regions
It specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size.
Value
4 MByte
x16
Async.
8 Byte
2
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