STM32F102RBT6 Datasheet, PDF (48/76 Pages) STMicroelectronics – Medium-density USB access line,ARM-based 32b MCU with 64/128KB Flash,USB FS interface,6 timers, ADC&8 com. interfaces

Electrical characteristics
STM32F102x8, STM32F102xB
5.3.12
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V_SS or
above V_DD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of spec current injection on adjacent pins or other functional failure (for
example reset, oscillator frequency deviation).
The test results are given in Table 33.
Table 33. I/O current injection susceptibility
Symbol
Description
Functional susceptibility
Negative
Positive
Unit
injection
injection
Injected current on OSC_IN32,
OSC_OUT32, PA4, PA5, PC13
I_INJ
Injected current on all FT pins
Injected current on any other pin
-0
+0
-5
+0
mA
-5
+5
5.3.13 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 34 are derived from tests
performed under the conditions summarized in Table 8. All I/Os are CMOS and TTL
compliant.
Table 34. I/O static characteristics
Symbol
Parameter
Standard I/O input low level
voltage
V_IL
I/O FT⁽¹⁾ input low level voltage
Standard I/O input high level
voltage
V_IH
I/O FT⁽¹⁾ input high level voltage
Conditions
V_DD > 2 V
V_DD ≤ 2 V
Min
Typ
–0.3
-
–0.3
-
0.41 (V_DD– 2)
+ 1.3
-
0.42 (V_DD– 2)
-
+ 1.0
Max
Unit
0.28 (V_DD– 2)
+ 0.8
0.32 (V_DD– 2)
+ 0.75
V
V_DD+0.5
5.5
5.2
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