M58LW032C Datasheet, PDF (47/61 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory

M58LW032C
Table 28. CFI - Device Voltage and Timing Specification
Address A21-A1
Data
Description
1Bh
27h ^{(1) V}DD ^{Min, 2.7V}
1Ch
36h ^{(1) V}DD ^{max, 3.6V}
1Dh
00h ^{(2) V}PP ^{min – Not Available}
1Eh
00h ^{(2) V}PP ^{max – Not Available}
1Fh
04h
2ⁿ µs typical time-out for Word, DWord prog – Not Available
20h
08h
2ⁿ µs, typical time-out for max buffer write
21h
0Ah
2ⁿ ms, typical time-out for Erase Block
22h
00h ⁽³⁾ 2ⁿ ms, typical time-out for chip erase – Not Available
23h
04h
2ⁿ x typical for Word Dword time-out max – Not Available
24h
04h
2ⁿ x typical for buffer write time-out max
25h
04h
2ⁿ x typical for individual block erase time-out maximum
26h
00h ⁽³⁾ 2ⁿ x typical for chip erase max time-out – Not Available
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
Table 29. Device Geometry Definition
Address A21-A1
Data
Description
27h
16h
n where 2ⁿ is number of bytes memory Size
28h
01h
Device Interface
29h
00h
Organization Sync./Async.
2Ah
05h
Maximum number of bytes in Write Buffer, 2ⁿ
2Bh
00h
2Ch
01h
Bit7-0 = number of Erase Block Regions in device
2Dh
1Fh
Number (n-1) of Erase Blocks of identical size; n=64
2Eh
00h
2Fh
00h
Erase Block Region Information
30h
02h
x 256 bytes per Erase block (128K bytes)
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