Z0410XE Datasheet, PDF (4/6 Pages) STMicroelectronics – These parts are intended for general purpose

Z0410xE/F
Fig.6 : Relative variation of thermal impedance
versus pulse duration (TO202-1).
Fig.7 : Relative variation of thermal impedance
junction to ambient versus pulse duration
(TO202-2).
Zth/Rth
1.00
Zth(j-a)/Rth(j-a)
1.00
0.10
Zth (j-c)
Zt h( j-a)
0.10
0.01
1E-3
1E-2
1E-1
1 E +0
t p (s )
1E+1 1E+2 5E+2
0.01
1E-3
1E-2 1E-1
1E+0
tp (s)
1E+1 1E+2 5E+2
Fig.9 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 ^o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 ^o C]
1.8
Igt
1.6
1.4
1.2 ^Ih
1.0
0.8
0.6
Tj(^oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.11 : Non repetitive surge peak on-state cur-
rent for a sinusoidal pulse with width : tp ≤ 10ms,
and corresponding value of I²t.
Fig.10 : Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
20
15
Tj initial = 25^oC
10
5
Number of cycles
0
1
10
10 0
1000
Fig.12 : On-state characteristics (maximum val-
ues).
I _TSM (A). I²t (A²s)
100
Tj initial = 25^oC
ITSM
10
I² t
1
1
I _TM (A)
100
Tj initial
10
25^oC
tp (ms)
10
Tj max
1
Tj max
Vto =0.98V
Rt =0.180
VTM(V)
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
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