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| WS27C256L Datasheet, PDF (4/5 Pages) STMicroelectronics – Military 32K x 8 CMOS EPROM | |||
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WS27C256L
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V. See Notes 8, 9 and 10)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
ILI
Input Leakage Current (VIN = VCC or Gnd)
â10
10
µA
IPP
VPP Supply Current During
Programming Pulse (CE/PGM = VIL)
60
mA
ICC
VCC Supply Current
40
mA
VIL
Input Low Voltage
â0.1
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.3
V
VOL
Output Low Voltage During Verify (IOL = 2.1 mA)
0.4
V
VOH
Output High Voltage During Verify (IOH = â400 µA)
3.5
V
NOTES: 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.
9. VPP must not be greater than 14 volts including overshoot. During CE/PGM = VIL, VPP must not be switched from 5 volts
to 12.5 volts or vice-versa.
10. During power up the CE/PGM pin must be brought high (⥠VIH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V)
SYMBOLS
PARAMETER
MIN
TYP
MAX
UNITS
tAS
Address Setup Time
2
tCOH
CE High to OE High
2
tOES
Output Enable Setup Time
2
tOS
Data Setup Time
2
tAH
Address Hold Time
0
tOH
Data Hold Time
2
tDF
Chip Disable to Output Float Delay
0
tOE
Data Valid From Output Enable
tVS
VPP Setup Time
2
tPW
PGM Pulse Width
500
tOCX
OE Low to CE "Don't Care"
2
µs
µs
µs
µs
µs
µs
55
ns
55
ns
µs
1000
µs
µs
PROGRAMMING WAVEFORM
ADDRESSES
DATA
VPP
VPP
VCC
VIH
CE/PGM
VIL
VIH
OE
VIL
ADDRESS STABLE
tAS
DATA IN STABLE
HIGH Z
tOS
tOH
tOE
tAH
DATA OUT
VALID
tDF
tVS
tCES
tOCX
tCOH
tPW
tOES
4-22
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